磁控濺射設備

磁(ci)(ci)控濺射原(yuan)理：電(dian)子(zi)(zi)(zi)在電(dian)場(chang)的(de)作(zuo)用(yong)(yong)下(xia)加(jia)(jia)速飛(fei)向(xiang)基片的(de)過(guo)程(cheng)中與氬(ya)原(yuan)子(zi)(zi)(zi)發(fa)生碰(peng)撞(zhuang)，電(dian)離(li)(li)出(chu)大量(liang)的(de)氬(ya)離(li)(li)子(zi)(zi)(zi)和電(dian)子(zi)(zi)(zi)，電(dian)子(zi)(zi)(zi)飛(fei)向(xiang)基片。氬(ya)離(li)(li)子(zi)(zi)(zi)在電(dian)場(chang)的(de)作(zuo)用(yong)(yong)下(xia)加(jia)(jia)速轟擊靶(ba)(ba)材(cai)，濺射出(chu)大量(liang)的(de)靶(ba)(ba)材(cai)原(yuan)子(zi)(zi)(zi)，呈中性的(de)靶(ba)(ba)原(yuan)子(zi)(zi)(zi)（或分子(zi)(zi)(zi)）沉積在基片上成膜。二次(ci)電(dian)子(zi)(zi)(zi)在加(jia)(jia)速飛(fei)向(xiang)基片的(de)過(guo)程(cheng)中受到(dao)磁(ci)(ci)場(chang)洛倫茲力的(de)影響，被束縛在靠近靶(ba)(ba)面(mian)的(de)等離(li)(li)子(zi)(zi)(zi)體(ti)區(qu)(qu)域(yu)內，該(gai)區(qu)(qu)域(yu)內等離(li)(li)子(zi)(zi)(zi)體(ti)密(mi)度很(hen)高，二次(ci)電(dian)子(zi)(zi)(zi)在磁(ci)(ci)場(chang)的(de)作(zuo)用(yong)(yong)下(xia)圍繞靶(ba)(ba)面(mian)作(zuo)圓周(zhou)運動，該(gai)電(dian)子(zi)(zi)(zi)的(de)運動路徑很(hen)長。

在(zai)運(yun)動過程中(zhong)不(bu)斷的(de)(de)與(yu)氬原子(zi)發生碰撞電(dian)(dian)(dian)(dian)離出大量的(de)(de)氬離子(zi)轟(hong)擊靶(ba)材(cai)，經過多(duo)(duo)次(ci)碰撞后電(dian)(dian)(dian)(dian)子(zi)的(de)(de)能(neng)量逐漸降低(di)，擺脫磁(ci)(ci)力(li)(li)線的(de)(de)束(shu)縛，遠離靶(ba)材(cai)，最(zui)終沉(chen)積在(zai)基片(pian)上。 磁(ci)(ci)控濺(jian)射(she)就是(shi)以磁(ci)(ci)場(chang)束(shu)縛和延長電(dian)(dian)(dian)(dian)子(zi)的(de)(de)運(yun)動路徑，改變電(dian)(dian)(dian)(dian)子(zi)的(de)(de)運(yun)動方向，提高工作(zuo)(zuo)(zuo)氣體的(de)(de)電(dian)(dian)(dian)(dian)離率和有效(xiao)利(li)用電(dian)(dian)(dian)(dian)子(zi)的(de)(de)能(neng)量。電(dian)(dian)(dian)(dian)子(zi)的(de)(de)歸(gui)宿(su)不(bu)僅僅是(shi)基片(pian)，真空(kong)(kong)室(shi)內壁及(ji)靶(ba)源(yuan)陽極(ji)也是(shi)電(dian)(dian)(dian)(dian)子(zi)歸(gui)宿(su)。但一般基片(pian)與(yu)真空(kong)(kong)室(shi)及(ji)陽極(ji)在(zai)同一電(dian)(dian)(dian)(dian)勢。磁(ci)(ci)場(chang)與(yu)電(dian)(dian)(dian)(dian)場(chang)的(de)(de)交(jiao)互作(zuo)(zuo)(zuo)用（ E X B drift）使單(dan)個電(dian)(dian)(dian)(dian)子(zi)軌跡呈三(san)維螺旋狀，而不(bu)是(shi)僅僅在(zai)靶(ba)面(mian)(mian)圓周運(yun)動。至(zhi)于靶(ba)面(mian)(mian)圓周型的(de)(de)濺(jian)射(she)輪廓(kuo)，那(nei)是(shi)靶(ba)源(yuan)磁(ci)(ci)場(chang)磁(ci)(ci)力(li)(li)線呈圓周形狀分布(bu)。磁(ci)(ci)力(li)(li)線分布(bu)方向不(bu)同會對成膜有很大關系。 在(zai)E X B shift機理(li)下工作(zuo)(zuo)(zuo)的(de)(de)除磁(ci)(ci)控濺(jian)射(she)外，還有多(duo)(duo)弧鍍靶(ba)源(yuan)，離子(zi)源(yuan)，等離子(zi)源(yuan)等都在(zai)此原理(li)下工作(zuo)(zuo)(zuo)。所不(bu)同的(de)(de)是(shi)電(dian)(dian)(dian)(dian)場(chang)方向，電(dian)(dian)(dian)(dian)壓電(dian)(dian)(dian)(dian)流大小(xiao)等因素。

磁控濺射的(de)基(ji)本原理(li)是(shi)利(li)用 Ar一O2混(hun)合氣體(ti)中的(de)等離子體(ti)在電場和(he)交變磁場的(de)作用下，被加速的(de)高能粒(li)子轟擊靶材表(biao)(biao)面(mian)(mian)，能量交換后，靶材表(biao)(biao)面(mian)(mian)的(de)原子脫離原晶格而逸出，轉移到基(ji)體(ti)表(biao)(biao)面(mian)(mian)而成膜。

磁控濺(jian)射(she)的(de)特點是成膜(mo)速率高，基片溫(wen)度低，膜(mo)的(de)粘附性好(hao)，可(ke)實現大面積鍍膜(mo)。該技(ji)術可(ke)以分為直流磁控濺(jian)射(she)法(fa)和射(she)頻磁控濺(jian)射(she)法(fa)。

磁(ci)控(kong)濺(jian)(jian)(jian)(jian)射(she)(she)(magnetron-sputtering)是70年(nian)代迅(xun)速(su)發展起(qi)來(lai)的(de)(de)(de)一種(zhong)“高(gao)(gao)(gao)速(su)低(di)溫濺(jian)(jian)(jian)(jian)射(she)(she)技(ji)術”。磁(ci)控(kong)濺(jian)(jian)(jian)(jian)射(she)(she)是在(zai)(zai)陰(yin)極(ji)(ji)(ji)靶(ba)的(de)(de)(de)表面上(shang)方形成(cheng)一個(ge)正(zheng)交(jiao)電(dian)(dian)(dian)(dian)磁(ci)場(chang)(chang)。當濺(jian)(jian)(jian)(jian)射(she)(she)產(chan)生(sheng)的(de)(de)(de)二(er)次電(dian)(dian)(dian)(dian)子在(zai)(zai)陰(yin)極(ji)(ji)(ji)位(wei)降區內被(bei)加速(su)為高(gao)(gao)(gao)能(neng)電(dian)(dian)(dian)(dian)子后(hou)，并不直(zhi)接飛向陽極(ji)(ji)(ji)，而(er)是在(zai)(zai)正(zheng)交(jiao)電(dian)(dian)(dian)(dian)磁(ci)場(chang)(chang)作用(yong)下作來(lai)回振蕩的(de)(de)(de)近似(si)擺線的(de)(de)(de)運動。高(gao)(gao)(gao)能(neng)電(dian)(dian)(dian)(dian)子不斷(duan)與氣體分子發生(sheng)碰(peng)撞并向后(hou)者(zhe)轉(zhuan)移能(neng)量，使之電(dian)(dian)(dian)(dian)離而(er)本身(shen)變(bian)成(cheng)低(di)能(neng)電(dian)(dian)(dian)(dian)子。這些低(di)能(neng)電(dian)(dian)(dian)(dian)子最終沿磁(ci)力(li)線漂移到陰(yin)極(ji)(ji)(ji)附近的(de)(de)(de)輔助(zhu)陽極(ji)(ji)(ji)而(er)被(bei)吸(xi)收(shou)，避免高(gao)(gao)(gao)能(neng)電(dian)(dian)(dian)(dian)子對極(ji)(ji)(ji)板(ban)(ban)的(de)(de)(de)強烈轟(hong)擊，消(xiao)除(chu)了(le)二(er)極(ji)(ji)(ji)濺(jian)(jian)(jian)(jian)射(she)(she)中(zhong)極(ji)(ji)(ji)板(ban)(ban)被(bei)轟(hong)擊加熱(re)和被(bei)電(dian)(dian)(dian)(dian)子輻(fu)照引(yin)起(qi)的(de)(de)(de)損傷，體現出磁(ci)控(kong)濺(jian)(jian)(jian)(jian)射(she)(she)中(zhong)極(ji)(ji)(ji)板(ban)(ban)“低(di)溫”的(de)(de)(de)特點。由于(yu)外加磁(ci)場(chang)(chang)的(de)(de)(de)存在(zai)(zai)，電(dian)(dian)(dian)(dian)子的(de)(de)(de)復雜(za)運動增加了(le)電(dian)(dian)(dian)(dian)離率(lv)，實(shi)現了(le)高(gao)(gao)(gao)速(su)濺(jian)(jian)(jian)(jian)射(she)(she)。磁(ci)控(kong)濺(jian)(jian)(jian)(jian)射(she)(she)的(de)(de)(de)技(ji)術特點是要在(zai)(zai)陰(yin)極(ji)(ji)(ji)靶(ba)面附件(jian)產(chan)生(sheng)與電(dian)(dian)(dian)(dian)場(chang)(chang)方向垂直(zhi)的(de)(de)(de)磁(ci)場(chang)(chang)，一般采用(yong)磁(ci)鐵實(shi)現。