磁控濺射鍍(du)膜機詳情

磁控濺(jian)射包括很多種類。各有(you)不同(tong)工作原(yuan)理和應用(yong)對(dui)象。但有(you)一共同(tong)點：利用(yong)磁場(chang)(chang)與(yu)電場(chang)(chang)交互作用(yong)，使(shi)電子(zi)在靶表(biao)面附近成螺旋狀運(yun)行，從而增大電子(zi)撞擊氬(ya)氣產生離子(zi)的概率。所產生的離子(zi)在電場(chang)(chang)作用(yong)下撞向(xiang)靶面從而濺(jian)射出靶材。

靶(ba)(ba)(ba)源(yuan)分(fen)平(ping)(ping)(ping)衡(heng)(heng)式(shi)(shi)(shi)和(he)非平(ping)(ping)(ping)衡(heng)(heng)式(shi)(shi)(shi)，平(ping)(ping)(ping)衡(heng)(heng)式(shi)(shi)(shi)靶(ba)(ba)(ba)源(yuan)鍍(du)(du)膜均勻，非平(ping)(ping)(ping)衡(heng)(heng)式(shi)(shi)(shi)靶(ba)(ba)(ba)源(yuan)鍍(du)(du)膜膜層和(he)基體(ti)結合(he)力強。平(ping)(ping)(ping)衡(heng)(heng)靶(ba)(ba)(ba)源(yuan)多(duo)用(yong)(yong)(yong)于(yu)(yu)(yu)(yu)(yu)半導(dao)體(ti)光學膜，非平(ping)(ping)(ping)衡(heng)(heng)多(duo)用(yong)(yong)(yong)于(yu)(yu)(yu)(yu)(yu)磨損裝飾(shi)膜。磁(ci)(ci)(ci)(ci)(ci)(ci)控(kong)(kong)陰(yin)極按照(zhao)磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)(chang)位(wei)形分(fen)布不(bu)同(tong)，大(da)(da)致可分(fen)為平(ping)(ping)(ping)衡(heng)(heng)態(tai)磁(ci)(ci)(ci)(ci)(ci)(ci)控(kong)(kong)陰(yin)極和(he)非平(ping)(ping)(ping)衡(heng)(heng)態(tai)磁(ci)(ci)(ci)(ci)(ci)(ci)控(kong)(kong)陰(yin)極。平(ping)(ping)(ping)衡(heng)(heng)態(tai)磁(ci)(ci)(ci)(ci)(ci)(ci)控(kong)(kong)陰(yin)極內外(wai)磁(ci)(ci)(ci)(ci)(ci)(ci)鋼的(de)磁(ci)(ci)(ci)(ci)(ci)(ci)通量大(da)(da)致相等，兩極磁(ci)(ci)(ci)(ci)(ci)(ci)力線(xian)(xian)閉合(he)于(yu)(yu)(yu)(yu)(yu)靶(ba)(ba)(ba)面(mian)，很好地將(jiang)電子(zi)(zi)(zi)/等離子(zi)(zi)(zi)體(ti)約束在靶(ba)(ba)(ba)面(mian)附(fu)近，增加了(le)碰撞幾率(lv)(lv)，提高了(le)離化效率(lv)(lv)，因(yin)而在較(jiao)低的(de)工作(zuo)氣壓和(he)電壓下就能(neng)起輝并維持(chi)輝光放電，靶(ba)(ba)(ba)材(cai)利(li)(li)用(yong)(yong)(yong)率(lv)(lv)相對(dui)較(jiao)高。但(dan)由(you)于(yu)(yu)(yu)(yu)(yu)電子(zi)(zi)(zi)沿磁(ci)(ci)(ci)(ci)(ci)(ci)力線(xian)(xian)運動主(zhu)要閉合(he)于(yu)(yu)(yu)(yu)(yu)靶(ba)(ba)(ba)面(mian)，基片區域(yu)(yu)所受(shou)離子(zi)(zi)(zi)轟(hong)擊較(jiao)小(xiao)(xiao)。非平(ping)(ping)(ping)衡(heng)(heng)磁(ci)(ci)(ci)(ci)(ci)(ci)控(kong)(kong)濺射技術，即(ji)讓磁(ci)(ci)(ci)(ci)(ci)(ci)控(kong)(kong)陰(yin)極外(wai)磁(ci)(ci)(ci)(ci)(ci)(ci)極磁(ci)(ci)(ci)(ci)(ci)(ci)通大(da)(da)于(yu)(yu)(yu)(yu)(yu)內磁(ci)(ci)(ci)(ci)(ci)(ci)極，兩極磁(ci)(ci)(ci)(ci)(ci)(ci)力線(xian)(xian)在靶(ba)(ba)(ba)面(mian)不(bu)完全閉合(he)，部(bu)(bu)分(fen)磁(ci)(ci)(ci)(ci)(ci)(ci)力線(xian)(xian)可沿靶(ba)(ba)(ba)的(de)邊緣延伸到基片區域(yu)(yu)，從而部(bu)(bu)分(fen)電子(zi)(zi)(zi)可以沿著磁(ci)(ci)(ci)(ci)(ci)(ci)力線(xian)(xian)擴展到基片，增加基片區域(yu)(yu)的(de)等離子(zi)(zi)(zi)體(ti)密度和(he)氣體(ti)電離率(lv)(lv)。不(bu)管平(ping)(ping)(ping)衡(heng)(heng)還是非平(ping)(ping)(ping)衡(heng)(heng)，若磁(ci)(ci)(ci)(ci)(ci)(ci)鐵靜(jing)止，其磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)(chang)特性決定(ding)了(le)一般靶(ba)(ba)(ba)材(cai)利(li)(li)用(yong)(yong)(yong)率(lv)(lv)小(xiao)(xiao)于(yu)(yu)(yu)(yu)(yu)30%。為增大(da)(da)靶(ba)(ba)(ba)材(cai)利(li)(li)用(yong)(yong)(yong)率(lv)(lv)，可采用(yong)(yong)(yong)旋轉(zhuan)磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)(chang)。但(dan)旋轉(zhuan)磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)(chang)需(xu)要旋轉(zhuan)機構，同(tong)時濺射速率(lv)(lv)要減小(xiao)(xiao)。旋轉(zhuan)磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)(chang)多(duo)用(yong)(yong)(yong)于(yu)(yu)(yu)(yu)(yu)大(da)(da)型或(huo)貴(gui)重(zhong)靶(ba)(ba)(ba)，如半導(dao)體(ti)膜濺射。對(dui)于(yu)(yu)(yu)(yu)(yu)小(xiao)(xiao)型設備和(he)一般工業設備，多(duo)用(yong)(yong)(yong)磁(ci)(ci)(ci)(ci)(ci)(ci)場(chang)(chang)靜(jing)止靶(ba)(ba)(ba)源(yuan)。