磁控濺射設備

磁控濺射原(yuan)理：電(dian)(dian)(dian)(dian)子(zi)(zi)在電(dian)(dian)(dian)(dian)場(chang)(chang)的(de)(de)(de)作(zuo)用下加速(su)(su)飛(fei)向(xiang)(xiang)基(ji)片(pian)的(de)(de)(de)過程中與氬原(yuan)子(zi)(zi)發生碰(peng)撞(zhuang)，電(dian)(dian)(dian)(dian)離(li)(li)出大(da)量的(de)(de)(de)氬離(li)(li)子(zi)(zi)和電(dian)(dian)(dian)(dian)子(zi)(zi)，電(dian)(dian)(dian)(dian)子(zi)(zi)飛(fei)向(xiang)(xiang)基(ji)片(pian)。氬離(li)(li)子(zi)(zi)在電(dian)(dian)(dian)(dian)場(chang)(chang)的(de)(de)(de)作(zuo)用下加速(su)(su)轟擊(ji)靶(ba)材，濺射出大(da)量的(de)(de)(de)靶(ba)材原(yuan)子(zi)(zi)，呈(cheng)中性的(de)(de)(de)靶(ba)原(yuan)子(zi)(zi)（或分子(zi)(zi)）沉積在基(ji)片(pian)上成膜(mo)。二次(ci)電(dian)(dian)(dian)(dian)子(zi)(zi)在加速(su)(su)飛(fei)向(xiang)(xiang)基(ji)片(pian)的(de)(de)(de)過程中受(shou)到磁場(chang)(chang)洛倫茲力的(de)(de)(de)影響，被(bei)束(shu)縛在靠近靶(ba)面(mian)的(de)(de)(de)等(deng)離(li)(li)子(zi)(zi)體(ti)區(qu)域(yu)(yu)內(nei)，該(gai)區(qu)域(yu)(yu)內(nei)等(deng)離(li)(li)子(zi)(zi)體(ti)密度很(hen)高，二次(ci)電(dian)(dian)(dian)(dian)子(zi)(zi)在磁場(chang)(chang)的(de)(de)(de)作(zuo)用下圍(wei)繞靶(ba)面(mian)作(zuo)圓周運動，該(gai)電(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)運動路徑很(hen)長(chang)。

在運動過程(cheng)中不斷的(de)(de)(de)與氬原(yuan)子(zi)發生碰(peng)撞(zhuang)電(dian)(dian)(dian)(dian)離(li)(li)出大量的(de)(de)(de)氬離(li)(li)子(zi)轟擊靶(ba)材，經過多次碰(peng)撞(zhuang)后電(dian)(dian)(dian)(dian)子(zi)的(de)(de)(de)能量逐漸降(jiang)低，擺(bai)脫(tuo)磁(ci)力線的(de)(de)(de)束(shu)縛(fu)，遠離(li)(li)靶(ba)材，最終沉(chen)積在基片(pian)上。 磁(ci)控(kong)濺(jian)射(she)就是(shi)以磁(ci)場束(shu)縛(fu)和延長(chang)電(dian)(dian)(dian)(dian)子(zi)的(de)(de)(de)運動路徑，改變電(dian)(dian)(dian)(dian)子(zi)的(de)(de)(de)運動方向，提高工(gong)作氣體的(de)(de)(de)電(dian)(dian)(dian)(dian)離(li)(li)率(lv)和有(you)效(xiao)利用(yong)電(dian)(dian)(dian)(dian)子(zi)的(de)(de)(de)能量。電(dian)(dian)(dian)(dian)子(zi)的(de)(de)(de)歸(gui)宿(su)不僅僅是(shi)基片(pian)，真空(kong)室(shi)內壁(bi)及靶(ba)源(yuan)陽(yang)極(ji)也是(shi)電(dian)(dian)(dian)(dian)子(zi)歸(gui)宿(su)。但一(yi)般基片(pian)與真空(kong)室(shi)及陽(yang)極(ji)在同(tong)一(yi)電(dian)(dian)(dian)(dian)勢。磁(ci)場與電(dian)(dian)(dian)(dian)場的(de)(de)(de)交互作用(yong)（ E X B drift）使單個電(dian)(dian)(dian)(dian)子(zi)軌(gui)跡呈(cheng)三維螺旋(xuan)狀，而(er)不是(shi)僅僅在靶(ba)面圓(yuan)周(zhou)運動。至(zhi)于靶(ba)面圓(yuan)周(zhou)型的(de)(de)(de)濺(jian)射(she)輪(lun)廓，那是(shi)靶(ba)源(yuan)磁(ci)場磁(ci)力線呈(cheng)圓(yuan)周(zhou)形狀分(fen)布。磁(ci)力線分(fen)布方向不同(tong)會對成膜有(you)很大關系。 在E X B shift機理下工(gong)作的(de)(de)(de)除磁(ci)控(kong)濺(jian)射(she)外，還有(you)多弧鍍(du)靶(ba)源(yuan)，離(li)(li)子(zi)源(yuan)，等離(li)(li)子(zi)源(yuan)等都在此原(yuan)理下工(gong)作。所(suo)不同(tong)的(de)(de)(de)是(shi)電(dian)(dian)(dian)(dian)場方向，電(dian)(dian)(dian)(dian)壓電(dian)(dian)(dian)(dian)流大小等因素。

磁控濺射的基(ji)本原(yuan)(yuan)理是利用 Ar一O2混(hun)合氣體(ti)中的等(deng)離子(zi)體(ti)在電場(chang)和交變磁場(chang)的作用下(xia)，被加(jia)速的高(gao)能粒子(zi)轟擊(ji)靶材(cai)表面(mian)(mian)，能量交換后，靶材(cai)表面(mian)(mian)的原(yuan)(yuan)子(zi)脫離原(yuan)(yuan)晶格而逸出(chu)，轉移到基(ji)體(ti)表面(mian)(mian)而成膜(mo)。

磁控濺(jian)射(she)的(de)特點是成膜速率高，基片溫度低，膜的(de)粘附(fu)性好，可實現大面(mian)積鍍膜。該技術可以分為直流磁控濺(jian)射(she)法(fa)和射(she)頻磁控濺(jian)射(she)法(fa)。

磁(ci)控濺(jian)(jian)射(she)(magnetron-sputtering)是(shi)70年代(dai)迅速發(fa)(fa)展(zhan)起來的(de)(de)一種“高速低(di)(di)溫(wen)濺(jian)(jian)射(she)技(ji)術”。磁(ci)控濺(jian)(jian)射(she)是(shi)在(zai)(zai)陰(yin)極(ji)(ji)(ji)(ji)(ji)靶的(de)(de)表面上(shang)方形成一個(ge)正(zheng)交電(dian)(dian)磁(ci)場(chang)。當濺(jian)(jian)射(she)產生(sheng)的(de)(de)二次(ci)電(dian)(dian)子(zi)(zi)(zi)在(zai)(zai)陰(yin)極(ji)(ji)(ji)(ji)(ji)位降區內被(bei)加(jia)(jia)(jia)速為(wei)高能(neng)(neng)(neng)(neng)電(dian)(dian)子(zi)(zi)(zi)后(hou)，并不直接飛(fei)向陽極(ji)(ji)(ji)(ji)(ji)，而(er)是(shi)在(zai)(zai)正(zheng)交電(dian)(dian)磁(ci)場(chang)作用下作來回振(zhen)蕩的(de)(de)近(jin)似(si)擺(bai)線的(de)(de)運動(dong)。高能(neng)(neng)(neng)(neng)電(dian)(dian)子(zi)(zi)(zi)不斷與氣體(ti)分(fen)子(zi)(zi)(zi)發(fa)(fa)生(sheng)碰撞(zhuang)并向后(hou)者(zhe)轉移能(neng)(neng)(neng)(neng)量，使(shi)之電(dian)(dian)離(li)而(er)本身變成低(di)(di)能(neng)(neng)(neng)(neng)電(dian)(dian)子(zi)(zi)(zi)。這些低(di)(di)能(neng)(neng)(neng)(neng)電(dian)(dian)子(zi)(zi)(zi)最終沿(yan)磁(ci)力線漂移到(dao)陰(yin)極(ji)(ji)(ji)(ji)(ji)附近(jin)的(de)(de)輔助陽極(ji)(ji)(ji)(ji)(ji)而(er)被(bei)吸收，避免高能(neng)(neng)(neng)(neng)電(dian)(dian)子(zi)(zi)(zi)對極(ji)(ji)(ji)(ji)(ji)板的(de)(de)強烈轟擊(ji)，消除了(le)二極(ji)(ji)(ji)(ji)(ji)濺(jian)(jian)射(she)中(zhong)(zhong)極(ji)(ji)(ji)(ji)(ji)板被(bei)轟擊(ji)加(jia)(jia)(jia)熱和被(bei)電(dian)(dian)子(zi)(zi)(zi)輻照引起的(de)(de)損傷，體(ti)現(xian)出磁(ci)控濺(jian)(jian)射(she)中(zhong)(zhong)極(ji)(ji)(ji)(ji)(ji)板“低(di)(di)溫(wen)”的(de)(de)特點。由于外(wai)加(jia)(jia)(jia)磁(ci)場(chang)的(de)(de)存在(zai)(zai)，電(dian)(dian)子(zi)(zi)(zi)的(de)(de)復雜運動(dong)增加(jia)(jia)(jia)了(le)電(dian)(dian)離(li)率(lv)，實(shi)現(xian)了(le)高速濺(jian)(jian)射(she)。磁(ci)控濺(jian)(jian)射(she)的(de)(de)技(ji)術特點是(shi)要在(zai)(zai)陰(yin)極(ji)(ji)(ji)(ji)(ji)靶面附件(jian)產生(sheng)與電(dian)(dian)場(chang)方向垂(chui)直的(de)(de)磁(ci)場(chang)，一般(ban)采(cai)用磁(ci)鐵(tie)實(shi)現(xian)。