磁控濺射設備

磁控濺射原(yuan)(yuan)理(li)：電(dian)(dian)子(zi)(zi)(zi)在(zai)(zai)電(dian)(dian)場(chang)的(de)作用下(xia)(xia)加(jia)速飛(fei)向基(ji)片的(de)過(guo)程中(zhong)(zhong)(zhong)與氬(ya)原(yuan)(yuan)子(zi)(zi)(zi)發生碰撞，電(dian)(dian)離(li)出大量(liang)的(de)氬(ya)離(li)子(zi)(zi)(zi)和(he)電(dian)(dian)子(zi)(zi)(zi)，電(dian)(dian)子(zi)(zi)(zi)飛(fei)向基(ji)片。氬(ya)離(li)子(zi)(zi)(zi)在(zai)(zai)電(dian)(dian)場(chang)的(de)作用下(xia)(xia)加(jia)速轟擊靶(ba)(ba)(ba)材，濺射出大量(liang)的(de)靶(ba)(ba)(ba)材原(yuan)(yuan)子(zi)(zi)(zi)，呈中(zhong)(zhong)(zhong)性的(de)靶(ba)(ba)(ba)原(yuan)(yuan)子(zi)(zi)(zi)（或(huo)分(fen)子(zi)(zi)(zi)）沉積在(zai)(zai)基(ji)片上成膜。二(er)次電(dian)(dian)子(zi)(zi)(zi)在(zai)(zai)加(jia)速飛(fei)向基(ji)片的(de)過(guo)程中(zhong)(zhong)(zhong)受到磁場(chang)洛(luo)倫茲(zi)力的(de)影響，被束縛在(zai)(zai)靠近靶(ba)(ba)(ba)面的(de)等(deng)離(li)子(zi)(zi)(zi)體區域內，該(gai)(gai)區域內等(deng)離(li)子(zi)(zi)(zi)體密(mi)度(du)很(hen)高，二(er)次電(dian)(dian)子(zi)(zi)(zi)在(zai)(zai)磁場(chang)的(de)作用下(xia)(xia)圍繞靶(ba)(ba)(ba)面作圓周運動(dong)，該(gai)(gai)電(dian)(dian)子(zi)(zi)(zi)的(de)運動(dong)路(lu)徑很(hen)長(chang)。

在(zai)運(yun)動(dong)(dong)過程中不(bu)斷的(de)(de)(de)(de)與(yu)氬原(yuan)子(zi)(zi)發生(sheng)碰(peng)撞電(dian)(dian)(dian)(dian)(dian)(dian)離(li)出大(da)量的(de)(de)(de)(de)氬離(li)子(zi)(zi)轟擊(ji)靶(ba)(ba)材(cai)，經(jing)過多(duo)次碰(peng)撞后電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)能量逐漸降低，擺(bai)脫磁(ci)(ci)力(li)線(xian)的(de)(de)(de)(de)束(shu)縛，遠離(li)靶(ba)(ba)材(cai)，最終沉積在(zai)基片(pian)上。 磁(ci)(ci)控濺射就是(shi)(shi)以磁(ci)(ci)場束(shu)縛和延長電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)運(yun)動(dong)(dong)路(lu)徑，改變(bian)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)運(yun)動(dong)(dong)方向，提(ti)高(gao)工(gong)作(zuo)氣體的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)離(li)率和有(you)效利用(yong)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)能量。電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)歸(gui)宿不(bu)僅僅是(shi)(shi)基片(pian)，真空室內(nei)壁及靶(ba)(ba)源(yuan)(yuan)(yuan)陽(yang)極(ji)也(ye)是(shi)(shi)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)歸(gui)宿。但一(yi)般基片(pian)與(yu)真空室及陽(yang)極(ji)在(zai)同一(yi)電(dian)(dian)(dian)(dian)(dian)(dian)勢。磁(ci)(ci)場與(yu)電(dian)(dian)(dian)(dian)(dian)(dian)場的(de)(de)(de)(de)交互(hu)作(zuo)用(yong)（ E X B drift）使單(dan)個電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)軌跡呈三維螺旋狀，而不(bu)是(shi)(shi)僅僅在(zai)靶(ba)(ba)面(mian)圓(yuan)周運(yun)動(dong)(dong)。至于(yu)靶(ba)(ba)面(mian)圓(yuan)周型的(de)(de)(de)(de)濺射輪廓，那是(shi)(shi)靶(ba)(ba)源(yuan)(yuan)(yuan)磁(ci)(ci)場磁(ci)(ci)力(li)線(xian)呈圓(yuan)周形狀分(fen)布。磁(ci)(ci)力(li)線(xian)分(fen)布方向不(bu)同會對成膜有(you)很(hen)大(da)關系。 在(zai)E X B shift機理(li)下工(gong)作(zuo)的(de)(de)(de)(de)除磁(ci)(ci)控濺射外，還有(you)多(duo)弧鍍(du)靶(ba)(ba)源(yuan)(yuan)(yuan)，離(li)子(zi)(zi)源(yuan)(yuan)(yuan)，等(deng)離(li)子(zi)(zi)源(yuan)(yuan)(yuan)等(deng)都在(zai)此原(yuan)理(li)下工(gong)作(zuo)。所不(bu)同的(de)(de)(de)(de)是(shi)(shi)電(dian)(dian)(dian)(dian)(dian)(dian)場方向，電(dian)(dian)(dian)(dian)(dian)(dian)壓電(dian)(dian)(dian)(dian)(dian)(dian)流大(da)小等(deng)因素。

磁控濺射(she)的基本(ben)原理是利用 Ar一(yi)O2混合氣體中的等離子體在電場(chang)和交(jiao)變(bian)磁場(chang)的作用下，被加速的高能粒子轟擊靶材(cai)(cai)表(biao)面，能量(liang)交(jiao)換后，靶材(cai)(cai)表(biao)面的原子脫離原晶格而逸出，轉(zhuan)移(yi)到基體表(biao)面而成膜。

磁控(kong)濺射(she)的特點是成(cheng)膜速率高，基片溫度低，膜的粘附性好，可實現大面積鍍膜。該技(ji)術可以分為直(zhi)流磁控(kong)濺射(she)法和射(she)頻磁控(kong)濺射(she)法。

磁(ci)(ci)(ci)控(kong)濺射(she)(she)(magnetron-sputtering)是70年代迅速(su)(su)(su)發展起來(lai)的(de)(de)一(yi)種“高(gao)速(su)(su)(su)低溫濺射(she)(she)技(ji)術”。磁(ci)(ci)(ci)控(kong)濺射(she)(she)是在(zai)陰極(ji)靶的(de)(de)表面上方形成一(yi)個正交(jiao)(jiao)電(dian)(dian)(dian)磁(ci)(ci)(ci)場。當濺射(she)(she)產(chan)生(sheng)的(de)(de)二(er)次電(dian)(dian)(dian)子(zi)(zi)在(zai)陰極(ji)位(wei)降(jiang)區內被加速(su)(su)(su)為高(gao)能(neng)電(dian)(dian)(dian)子(zi)(zi)后，并不直接(jie)飛(fei)向(xiang)陽極(ji)，而是在(zai)正交(jiao)(jiao)電(dian)(dian)(dian)磁(ci)(ci)(ci)場作用下作來(lai)回振蕩的(de)(de)近似(si)擺(bai)線的(de)(de)運動(dong)。高(gao)能(neng)電(dian)(dian)(dian)子(zi)(zi)不斷與(yu)氣體(ti)(ti)分子(zi)(zi)發生(sheng)碰撞并向(xiang)后者轉(zhuan)移能(neng)量，使之電(dian)(dian)(dian)離(li)而本身變(bian)成低能(neng)電(dian)(dian)(dian)子(zi)(zi)。這(zhe)些低能(neng)電(dian)(dian)(dian)子(zi)(zi)最終沿(yan)磁(ci)(ci)(ci)力線漂移到陰極(ji)附近的(de)(de)輔助陽極(ji)而被吸收，避免高(gao)能(neng)電(dian)(dian)(dian)子(zi)(zi)對極(ji)板的(de)(de)強烈轟(hong)擊，消除了二(er)極(ji)濺射(she)(she)中(zhong)(zhong)極(ji)板被轟(hong)擊加熱(re)和被電(dian)(dian)(dian)子(zi)(zi)輻照引起的(de)(de)損傷，體(ti)(ti)現(xian)出磁(ci)(ci)(ci)控(kong)濺射(she)(she)中(zhong)(zhong)極(ji)板“低溫”的(de)(de)特點。由于外(wai)加磁(ci)(ci)(ci)場的(de)(de)存在(zai)，電(dian)(dian)(dian)子(zi)(zi)的(de)(de)復雜運動(dong)增(zeng)加了電(dian)(dian)(dian)離(li)率，實現(xian)了高(gao)速(su)(su)(su)濺射(she)(she)。磁(ci)(ci)(ci)控(kong)濺射(she)(she)的(de)(de)技(ji)術特點是要(yao)在(zai)陰極(ji)靶面附件產(chan)生(sheng)與(yu)電(dian)(dian)(dian)場方向(xiang)垂直的(de)(de)磁(ci)(ci)(ci)場，一(yi)般采用磁(ci)(ci)(ci)鐵實現(xian)。