磁控濺射設備

磁(ci)控濺射原(yuan)理：電(dian)子(zi)在(zai)(zai)電(dian)場的(de)(de)(de)作(zuo)(zuo)用下加(jia)速飛向基(ji)片的(de)(de)(de)過程中與氬原(yuan)子(zi)發生(sheng)碰撞，電(dian)離出大量的(de)(de)(de)氬離子(zi)和電(dian)子(zi)，電(dian)子(zi)飛向基(ji)片。氬離子(zi)在(zai)(zai)電(dian)場的(de)(de)(de)作(zuo)(zuo)用下加(jia)速轟擊靶(ba)材，濺射出大量的(de)(de)(de)靶(ba)材原(yuan)子(zi)，呈中性(xing)的(de)(de)(de)靶(ba)原(yuan)子(zi)（或分子(zi)）沉積在(zai)(zai)基(ji)片上成膜。二(er)次電(dian)子(zi)在(zai)(zai)加(jia)速飛向基(ji)片的(de)(de)(de)過程中受到磁(ci)場洛倫(lun)茲力(li)的(de)(de)(de)影響，被束縛在(zai)(zai)靠近靶(ba)面(mian)的(de)(de)(de)等(deng)離子(zi)體(ti)區(qu)域內，該(gai)區(qu)域內等(deng)離子(zi)體(ti)密度很高，二(er)次電(dian)子(zi)在(zai)(zai)磁(ci)場的(de)(de)(de)作(zuo)(zuo)用下圍繞靶(ba)面(mian)作(zuo)(zuo)圓周(zhou)運動，該(gai)電(dian)子(zi)的(de)(de)(de)運動路徑很長(chang)。

在(zai)(zai)運動(dong)(dong)過程中不(bu)斷的(de)(de)(de)(de)(de)與(yu)氬原(yuan)子(zi)(zi)發生碰撞(zhuang)電(dian)(dian)(dian)(dian)(dian)(dian)離(li)出大(da)(da)量的(de)(de)(de)(de)(de)氬離(li)子(zi)(zi)轟擊靶(ba)(ba)材，經過多次碰撞(zhuang)后電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)(de)能(neng)量逐漸降低，擺(bai)脫磁力線的(de)(de)(de)(de)(de)束縛，遠(yuan)離(li)靶(ba)(ba)材，最終沉積在(zai)(zai)基(ji)片上。 磁控濺(jian)射就是以(yi)磁場束縛和延長電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)(de)運動(dong)(dong)路徑，改(gai)變電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)(de)運動(dong)(dong)方(fang)向，提(ti)高工(gong)(gong)(gong)作(zuo)(zuo)氣(qi)體的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)離(li)率(lv)和有效利用(yong)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)(de)能(neng)量。電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)(de)(de)(de)歸宿(su)不(bu)僅(jin)(jin)(jin)僅(jin)(jin)(jin)是基(ji)片，真空室內壁及靶(ba)(ba)源(yuan)(yuan)陽極也是電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)歸宿(su)。但一(yi)般(ban)基(ji)片與(yu)真空室及陽極在(zai)(zai)同一(yi)電(dian)(dian)(dian)(dian)(dian)(dian)勢。磁場與(yu)電(dian)(dian)(dian)(dian)(dian)(dian)場的(de)(de)(de)(de)(de)交互作(zuo)(zuo)用(yong)（ E X B drift）使單(dan)個(ge)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)軌跡呈三維螺旋狀(zhuang)，而不(bu)是僅(jin)(jin)(jin)僅(jin)(jin)(jin)在(zai)(zai)靶(ba)(ba)面圓周運動(dong)(dong)。至于靶(ba)(ba)面圓周型的(de)(de)(de)(de)(de)濺(jian)射輪廓(kuo)，那是靶(ba)(ba)源(yuan)(yuan)磁場磁力線呈圓周形狀(zhuang)分(fen)布(bu)。磁力線分(fen)布(bu)方(fang)向不(bu)同會對成膜有很(hen)大(da)(da)關系(xi)。 在(zai)(zai)E X B shift機理(li)下工(gong)(gong)(gong)作(zuo)(zuo)的(de)(de)(de)(de)(de)除磁控濺(jian)射外，還(huan)有多弧鍍靶(ba)(ba)源(yuan)(yuan)，離(li)子(zi)(zi)源(yuan)(yuan)，等離(li)子(zi)(zi)源(yuan)(yuan)等都在(zai)(zai)此原(yuan)理(li)下工(gong)(gong)(gong)作(zuo)(zuo)。所不(bu)同的(de)(de)(de)(de)(de)是電(dian)(dian)(dian)(dian)(dian)(dian)場方(fang)向，電(dian)(dian)(dian)(dian)(dian)(dian)壓電(dian)(dian)(dian)(dian)(dian)(dian)流大(da)(da)小等因(yin)素。

磁控濺射的(de)基本(ben)原理是(shi)利用 Ar一O2混合(he)氣體中的(de)等(deng)離(li)子(zi)(zi)體在電(dian)場和交變磁場的(de)作用下，被加速(su)的(de)高能(neng)(neng)粒子(zi)(zi)轟(hong)擊靶(ba)材表(biao)面(mian)，能(neng)(neng)量交換(huan)后，靶(ba)材表(biao)面(mian)的(de)原子(zi)(zi)脫離(li)原晶格而逸出，轉移到(dao)基體表(biao)面(mian)而成(cheng)膜。

磁(ci)(ci)控濺射(she)的特點是成膜(mo)(mo)速率(lv)高，基(ji)片溫(wen)度低，膜(mo)(mo)的粘附性好(hao)，可實現大面積鍍膜(mo)(mo)。該技(ji)術可以分為直(zhi)流(liu)磁(ci)(ci)控濺射(she)法和射(she)頻磁(ci)(ci)控濺射(she)法。

磁(ci)控(kong)(kong)濺(jian)(jian)(jian)射(she)(magnetron-sputtering)是(shi)70年代迅速(su)(su)發展起(qi)來(lai)的(de)(de)一(yi)種“高(gao)(gao)速(su)(su)低(di)溫濺(jian)(jian)(jian)射(she)技術”。磁(ci)控(kong)(kong)濺(jian)(jian)(jian)射(she)是(shi)在陰極(ji)靶(ba)的(de)(de)表(biao)面上方形成一(yi)個正交(jiao)電(dian)磁(ci)場。當濺(jian)(jian)(jian)射(she)產生(sheng)的(de)(de)二(er)次(ci)電(dian)子(zi)(zi)在陰極(ji)位降區內(nei)被加(jia)(jia)速(su)(su)為高(gao)(gao)能電(dian)子(zi)(zi)后(hou)，并不直(zhi)(zhi)接飛向(xiang)陽(yang)極(ji)，而是(shi)在正交(jiao)電(dian)磁(ci)場作(zuo)用(yong)下作(zuo)來(lai)回振蕩的(de)(de)近似擺線的(de)(de)運動(dong)。高(gao)(gao)能電(dian)子(zi)(zi)不斷(duan)與(yu)氣體(ti)(ti)分子(zi)(zi)發生(sheng)碰(peng)撞并向(xiang)后(hou)者轉移能量，使之電(dian)離而本身變成低(di)能電(dian)子(zi)(zi)。這些低(di)能電(dian)子(zi)(zi)最終沿磁(ci)力線漂(piao)移到陰極(ji)附近的(de)(de)輔助陽(yang)極(ji)而被吸(xi)收，避免高(gao)(gao)能電(dian)子(zi)(zi)對極(ji)板的(de)(de)強烈轟(hong)擊，消除了(le)二(er)極(ji)濺(jian)(jian)(jian)射(she)中(zhong)極(ji)板被轟(hong)擊加(jia)(jia)熱和(he)被電(dian)子(zi)(zi)輻照引起(qi)的(de)(de)損傷(shang)，體(ti)(ti)現出磁(ci)控(kong)(kong)濺(jian)(jian)(jian)射(she)中(zhong)極(ji)板“低(di)溫”的(de)(de)特點。由于外加(jia)(jia)磁(ci)場的(de)(de)存(cun)在，電(dian)子(zi)(zi)的(de)(de)復雜運動(dong)增加(jia)(jia)了(le)電(dian)離率，實現了(le)高(gao)(gao)速(su)(su)濺(jian)(jian)(jian)射(she)。磁(ci)控(kong)(kong)濺(jian)(jian)(jian)射(she)的(de)(de)技術特點是(shi)要在陰極(ji)靶(ba)面附件產生(sheng)與(yu)電(dian)場方向(xiang)垂直(zhi)(zhi)的(de)(de)磁(ci)場，一(yi)般采用(yong)磁(ci)鐵實現。