磁控濺射鍍膜機詳情

磁(ci)控(kong)濺(jian)射包括很多(duo)種類。各有不同(tong)工作原理(li)和(he)應用(yong)對象。但(dan)有一共同(tong)點：利用(yong)磁(ci)場與(yu)電(dian)場交互作用(yong)，使電(dian)子在靶表面(mian)附近成螺旋狀運行，從(cong)而增(zeng)大電(dian)子撞擊氬氣產生(sheng)離子的概率。所產生(sheng)的離子在電(dian)場作用(yong)下撞向靶面(mian)從(cong)而濺(jian)射出靶材。

靶(ba)(ba)源分平(ping)(ping)(ping)衡(heng)(heng)(heng)式和(he)(he)(he)非(fei)(fei)(fei)平(ping)(ping)(ping)衡(heng)(heng)(heng)式，平(ping)(ping)(ping)衡(heng)(heng)(heng)式靶(ba)(ba)源鍍(du)膜均勻，非(fei)(fei)(fei)平(ping)(ping)(ping)衡(heng)(heng)(heng)式靶(ba)(ba)源鍍(du)膜膜層(ceng)和(he)(he)(he)基體結合(he)力(li)強(qiang)。平(ping)(ping)(ping)衡(heng)(heng)(heng)靶(ba)(ba)源多(duo)(duo)用(yong)(yong)于(yu)半導(dao)體光(guang)學膜，非(fei)(fei)(fei)平(ping)(ping)(ping)衡(heng)(heng)(heng)多(duo)(duo)用(yong)(yong)于(yu)磨損(sun)裝飾(shi)膜。磁(ci)控陰極(ji)按(an)照磁(ci)場(chang)(chang)位形分布不(bu)同(tong)，大(da)致(zhi)可分為(wei)(wei)平(ping)(ping)(ping)衡(heng)(heng)(heng)態磁(ci)控陰極(ji)和(he)(he)(he)非(fei)(fei)(fei)平(ping)(ping)(ping)衡(heng)(heng)(heng)態磁(ci)控陰極(ji)。平(ping)(ping)(ping)衡(heng)(heng)(heng)態磁(ci)控陰極(ji)內(nei)外磁(ci)鋼(gang)的磁(ci)通(tong)(tong)量大(da)致(zhi)相等(deng)，兩極(ji)磁(ci)力(li)線(xian)閉合(he)于(yu)靶(ba)(ba)面(mian)(mian)(mian)，很好地將電(dian)(dian)(dian)子(zi)/等(deng)離(li)子(zi)體約束(shu)在(zai)(zai)靶(ba)(ba)面(mian)(mian)(mian)附近，增加了(le)碰(peng)撞幾率(lv)(lv)(lv)(lv)，提高了(le)離(li)化效率(lv)(lv)(lv)(lv)，因而在(zai)(zai)較低的工作氣(qi)(qi)壓(ya)和(he)(he)(he)電(dian)(dian)(dian)壓(ya)下就能起(qi)輝并維持輝光(guang)放電(dian)(dian)(dian)，靶(ba)(ba)材(cai)利(li)用(yong)(yong)率(lv)(lv)(lv)(lv)相對(dui)較高。但由于(yu)電(dian)(dian)(dian)子(zi)沿(yan)磁(ci)力(li)線(xian)運(yun)動主要閉合(he)于(yu)靶(ba)(ba)面(mian)(mian)(mian)，基片(pian)(pian)區域(yu)所受離(li)子(zi)轟擊較小(xiao)。非(fei)(fei)(fei)平(ping)(ping)(ping)衡(heng)(heng)(heng)磁(ci)控濺射(she)技術，即(ji)讓磁(ci)控陰極(ji)外磁(ci)極(ji)磁(ci)通(tong)(tong)大(da)于(yu)內(nei)磁(ci)極(ji)，兩極(ji)磁(ci)力(li)線(xian)在(zai)(zai)靶(ba)(ba)面(mian)(mian)(mian)不(bu)完全(quan)閉合(he)，部分磁(ci)力(li)線(xian)可沿(yan)靶(ba)(ba)的邊緣延(yan)伸到基片(pian)(pian)區域(yu)，從而部分電(dian)(dian)(dian)子(zi)可以沿(yan)著磁(ci)力(li)線(xian)擴展到基片(pian)(pian)，增加基片(pian)(pian)區域(yu)的等(deng)離(li)子(zi)體密度和(he)(he)(he)氣(qi)(qi)體電(dian)(dian)(dian)離(li)率(lv)(lv)(lv)(lv)。不(bu)管平(ping)(ping)(ping)衡(heng)(heng)(heng)還是非(fei)(fei)(fei)平(ping)(ping)(ping)衡(heng)(heng)(heng)，若磁(ci)鐵靜(jing)(jing)止，其磁(ci)場(chang)(chang)特性決定了(le)一般靶(ba)(ba)材(cai)利(li)用(yong)(yong)率(lv)(lv)(lv)(lv)小(xiao)于(yu)30%。為(wei)(wei)增大(da)靶(ba)(ba)材(cai)利(li)用(yong)(yong)率(lv)(lv)(lv)(lv)，可采用(yong)(yong)旋(xuan)轉磁(ci)場(chang)(chang)。但旋(xuan)轉磁(ci)場(chang)(chang)需要旋(xuan)轉機構(gou)，同(tong)時濺射(she)速(su)率(lv)(lv)(lv)(lv)要減(jian)小(xiao)。旋(xuan)轉磁(ci)場(chang)(chang)多(duo)(duo)用(yong)(yong)于(yu)大(da)型或貴重(zhong)靶(ba)(ba)，如半導(dao)體膜濺射(she)。對(dui)于(yu)小(xiao)型設備(bei)和(he)(he)(he)一般工業(ye)設備(bei)，多(duo)(duo)用(yong)(yong)磁(ci)場(chang)(chang)靜(jing)(jing)止靶(ba)(ba)源。