磁控靶

磁控濺(jian)射(she)包(bao)括很(hen)多種類(lei)。各(ge)有不同工作原(yuan)理和應用(yong)對象。但有一(yi)共同點：利用(yong)磁場(chang)(chang)(chang)與電場(chang)(chang)(chang)交互作用(yong)，使(shi)電子在(zai)(zai)靶表面(mian)附近成螺旋狀(zhuang)運行，從(cong)(cong)而增大電子撞擊氬氣(qi)產生(sheng)(sheng)離(li)子的概率。所(suo)產生(sheng)(sheng)的離(li)子在(zai)(zai)電場(chang)(chang)(chang)作用(yong)下撞向靶面(mian)從(cong)(cong)而濺(jian)射(she)出靶材(cai)。

靶(ba)(ba)(ba)(ba)(ba)源(yuan)(yuan)分(fen)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)式和(he)非(fei)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)式，平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)式靶(ba)(ba)(ba)(ba)(ba)源(yuan)(yuan)鍍膜(mo)(mo)均勻，非(fei)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)式靶(ba)(ba)(ba)(ba)(ba)源(yuan)(yuan)鍍膜(mo)(mo)膜(mo)(mo)層和(he)基體結合(he)力強。平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)靶(ba)(ba)(ba)(ba)(ba)源(yuan)(yuan)多(duo)用(yong)(yong)(yong)(yong)于(yu)(yu)(yu)半導體光學膜(mo)(mo)，非(fei)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)多(duo)用(yong)(yong)(yong)(yong)于(yu)(yu)(yu)磨損裝飾膜(mo)(mo)。磁(ci)(ci)控陰極(ji)(ji)按照磁(ci)(ci)場位形分(fen)布不(bu)同，大(da)致(zhi)可分(fen)為(wei)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)態(tai)(tai)磁(ci)(ci)控陰極(ji)(ji)和(he)非(fei)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)態(tai)(tai)磁(ci)(ci)控陰極(ji)(ji)。平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)態(tai)(tai)磁(ci)(ci)控陰極(ji)(ji)內外(wai)磁(ci)(ci)鋼(gang)的(de)(de)(de)磁(ci)(ci)通量大(da)致(zhi)相等(deng)，兩極(ji)(ji)磁(ci)(ci)力線閉合(he)于(yu)(yu)(yu)靶(ba)(ba)(ba)(ba)(ba)面(mian)(mian)，很好地將(jiang)電子(zi)(zi)等(deng)離(li)子(zi)(zi)體約束在靶(ba)(ba)(ba)(ba)(ba)面(mian)(mian)附近，增(zeng)(zeng)加了(le)碰撞幾(ji)率(lv)(lv)(lv)，提高了(le)離(li)化效率(lv)(lv)(lv)，因(yin)而(er)在較低的(de)(de)(de)工(gong)作氣壓(ya)和(he)電壓(ya)下就能起輝并維持(chi)輝光放電，靶(ba)(ba)(ba)(ba)(ba)材利用(yong)(yong)(yong)(yong)率(lv)(lv)(lv)相對較高。但由(you)于(yu)(yu)(yu)電子(zi)(zi)沿(yan)磁(ci)(ci)力線運動(dong)主要閉合(he)于(yu)(yu)(yu)靶(ba)(ba)(ba)(ba)(ba)面(mian)(mian)，基片區域(yu)所受離(li)子(zi)(zi)轟擊較小(xiao)。非(fei)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)磁(ci)(ci)控濺射技術，即(ji)讓磁(ci)(ci)控陰極(ji)(ji)外(wai)磁(ci)(ci)極(ji)(ji)磁(ci)(ci)通大(da)于(yu)(yu)(yu)內磁(ci)(ci)極(ji)(ji)，兩極(ji)(ji)磁(ci)(ci)力線在靶(ba)(ba)(ba)(ba)(ba)面(mian)(mian)不(bu)完全閉合(he)，部分(fen)磁(ci)(ci)力線可沿(yan)靶(ba)(ba)(ba)(ba)(ba)的(de)(de)(de)邊緣(yuan)延(yan)伸到基片區域(yu)，從而(er)部分(fen)電子(zi)(zi)可以沿(yan)著磁(ci)(ci)力線擴展到基片，增(zeng)(zeng)加基片區域(yu)的(de)(de)(de)等(deng)離(li)子(zi)(zi)體密度和(he)氣體電離(li)率(lv)(lv)(lv)。不(bu)管平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)還(huan)是非(fei)平(ping)(ping)(ping)(ping)(ping)衡(heng)(heng)，若磁(ci)(ci)鐵靜止，其磁(ci)(ci)場特(te)性決定(ding)了(le)一般靶(ba)(ba)(ba)(ba)(ba)材利用(yong)(yong)(yong)(yong)率(lv)(lv)(lv)小(xiao)于(yu)(yu)(yu)30%。為(wei)增(zeng)(zeng)大(da)靶(ba)(ba)(ba)(ba)(ba)材利用(yong)(yong)(yong)(yong)率(lv)(lv)(lv)，可采用(yong)(yong)(yong)(yong)旋轉(zhuan)(zhuan)磁(ci)(ci)場。但旋轉(zhuan)(zhuan)磁(ci)(ci)場需要旋轉(zhuan)(zhuan)機(ji)構，同時濺射速率(lv)(lv)(lv)要減小(xiao)。旋轉(zhuan)(zhuan)磁(ci)(ci)場多(duo)用(yong)(yong)(yong)(yong)于(yu)(yu)(yu)大(da)型或貴重靶(ba)(ba)(ba)(ba)(ba)，如(ru)半導體膜(mo)(mo)濺射。對于(yu)(yu)(yu)小(xiao)型設備和(he)一般工(gong)業設備，多(duo)用(yong)(yong)(yong)(yong)磁(ci)(ci)場靜止靶(ba)(ba)(ba)(ba)(ba)源(yuan)(yuan)。