磁(ci)控(kong)濺(jian)射(she)的(de)(de)工作原(yuan)理是指(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)在(zai)(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)E的(de)(de)作用下，在(zai)(zai)(zai)飛(fei)向(xiang)基片(pian)過(guo)程(cheng)中與氬原(yuan)子(zi)(zi)(zi)(zi)(zi)發(fa)(fa)生碰撞，使(shi)其電(dian)(dian)(dian)(dian)(dian)(dian)(dian)離產(chan)(chan)生出Ar正離子(zi)(zi)(zi)(zi)(zi)和(he)新的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)；新電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)飛(fei)向(xiang)基片(pian)，Ar離子(zi)(zi)(zi)(zi)(zi)在(zai)(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)作用下加(jia)速(su)飛(fei)向(xiang)陰極靶(ba)，并(bing)(bing)以高能(neng)量轟(hong)擊(ji)靶(ba)表(biao)面(mian)(mian)，使(shi)靶(ba)材發(fa)(fa)生濺(jian)射(she)。在(zai)(zai)(zai)濺(jian)射(she)粒子(zi)(zi)(zi)(zi)(zi)中，中性的(de)(de)靶(ba)原(yuan)子(zi)(zi)(zi)(zi)(zi)或分子(zi)(zi)(zi)(zi)(zi)沉(chen)積在(zai)(zai)(zai)基片(pian)上形(xing)成薄膜，而(er)(er)產(chan)(chan)生的(de)(de)二次電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)會(hui)受(shou)到電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)和(he)磁(ci)場(chang)作用，產(chan)(chan)生E（電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)）×B（磁(ci)場(chang)）所指(zhi)的(de)(de)方向(xiang)漂移(yi)，簡(jian)稱E×B漂移(yi)，其運(yun)動軌跡近(jin)似于(yu)一條擺(bai)線。若為(wei)環形(xing)磁(ci)場(chang)，則電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)就(jiu)以近(jin)似擺(bai)線形(xing)式在(zai)(zai)(zai)靶(ba)表(biao)面(mian)(mian)做(zuo)圓周運(yun)動，它們的(de)(de)運(yun)動路徑不(bu)僅很長，而(er)(er)且被束(shu)縛(fu)在(zai)(zai)(zai)靠近(jin)靶(ba)表(biao)面(mian)(mian)的(de)(de)等離子(zi)(zi)(zi)(zi)(zi)體(ti)區(qu)域(yu)內，并(bing)(bing)且在(zai)(zai)(zai)該區(qu)域(yu)中電(dian)(dian)(dian)(dian)(dian)(dian)(dian)離出大量的(de)(de)Ar 來(lai)轟(hong)擊(ji)靶(ba)材，從而(er)(er)實現了高的(de)(de)沉(chen)積速(su)率。隨(sui)著碰撞次數的(de)(de)增加(jia)，二次電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)的(de)(de)能(neng)量消耗(hao)殆(dai)盡，逐(zhu)漸遠(yuan)離靶(ba)表(biao)面(mian)(mian)，并(bing)(bing)在(zai)(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)E的(de)(de)作用下沉(chen)積在(zai)(zai)(zai)基片(pian)上。由于(yu)該電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)的(de)(de)能(neng)量很低，傳遞給基片(pian)的(de)(de)能(neng)量很小，致使(shi)基片(pian)溫升較低。

磁控濺射(she)(she)(she)是入(ru)(ru)射(she)(she)(she)粒(li)(li)子(zi)(zi)(zi)(zi)和靶(ba)(ba)的(de)碰(peng)撞(zhuang)(zhuang)過(guo)(guo)程。入(ru)(ru)射(she)(she)(she)粒(li)(li)子(zi)(zi)(zi)(zi)在(zai)靶(ba)(ba)中經(jing)歷復雜的(de)散射(she)(she)(she)過(guo)(guo)程，和靶(ba)(ba)原子(zi)(zi)(zi)(zi)碰(peng)撞(zhuang)(zhuang)，把部分動(dong)量傳(chuan)給靶(ba)(ba)原子(zi)(zi)(zi)(zi)，此靶(ba)(ba)原子(zi)(zi)(zi)(zi)又和其他靶(ba)(ba)原子(zi)(zi)(zi)(zi)碰(peng)撞(zhuang)(zhuang)，形成級聯過(guo)(guo)程。在(zai)這種級聯過(guo)(guo)程中某些表面附近的(de)靶(ba)(ba)原子(zi)(zi)(zi)(zi)獲得向(xiang)外運動(dong)的(de)足夠動(dong)量，離開(kai)靶(ba)(ba)被濺射(she)(she)(she)出來。